? semiconductor components industries, llc, 2015 april, 2015 ? rev. 6 1 publication order number: ngtb40n120fl2w/d NGTB40N120FL2WG igbt - field stop ii this insulated gate bipolar transistor (igbt) features a robust and cost effective field stop ii trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. the igbt is well suited for ups and solar applications. incorporated into the device is a soft and fast co?packaged free wheeling diode with a low forward voltage. features ? extremely efficient trench with field stop technology ? t jmax = 175 c ? soft fast reverse recovery diode ? optimized for high speed switching ? 10 s short circuit capability ? these are pb?free devices typical applications ? solar inverter ? uninterruptible power inverter supplies (ups) ? welding absolute maximum ratings rating symbol value unit collector?emitter voltage v ces 1200 v collector current @ t c = 25 c @ t c = 100 c i c 80 40 a pulsed collector current, t pulse limited by t jmax i cm 200 a diode forward current @ t c = 25 c @ t c = 100 c i f 80 40 a diode pulsed current, t pulse limited by t jmax i fm 200 a gate?emitter voltage transient gate?emitter voltage (t pulse = 5 s, d < 0.10) v ge 20 30 v power dissipation @ t c = 25 c @ t c = 100 c p d 535 267 w short circuit withstand time v ge = 15 v, v ce = 500 v, t j 150 c t sc 10 s operating junction temperature range t j ?55 to +175 c storage temperature range t stg ?55 to +175 c lead temperature for soldering, 1/8 from case for 5 seconds t sld 260 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. to?247 case 340al c g 40 a, 1200 v v cesat = 2.0 v e off = 1.10 mj e device package shipping ordering information NGTB40N120FL2WG t o?247 (pb?free) 30 units / ra il www. onsemi.com a = assembly location y = year ww = work week g = pb?free package marking diagram 40n120fl2 aywwg g e c
NGTB40N120FL2WG www. onsemi.com 2 thermal characteristics rating symbol value unit thermal resistance junction?to?case, for igbt r jc 0.28 c/w thermal resistance junction?to?case, for diode r jc 0.5 c/w thermal resistance junction?to?ambient r ja 40 c/w electrical characteristics (t j = 25 c unless otherwise specified) parameter test conditions symbol min typ max unit static characteristic collector?emitter breakdown voltage, gate?emitter short?circuited v ge = 0 v, i c = 500 a v (br)ces 1200 ? ? v collector?emitter saturation voltage v ge = 15 v, i c = 40 a v ge = 15 v, i c = 40 a, t j = 175 c v cesat ? ? 2.00 2.40 2.40 ? v gate?emitter threshold voltage v ge = v ce , i c = 400 a v ge(th) 4.5 5.5 6.5 v collector?emitter cut?off current, gate? emitter short?circuited v ge = 0 v, v ce = 1200 v v ge = 0 v, v ce = 1200 v, t j = 175 c i ces ? ? ? ? 0.1 2 ma gate leakage current, collector?emitter short?circuited v ge = 20 v , v ce = 0 v i ges ? ? 200 na input capacitance v ce = 20 v, v ge = 0 v, f = 1 mhz c ies ? 7385 ? pf output capacitance c oes ? 230 ? reverse transfer capacitance c res ? 140 ? gate charge total v ce = 600 v, i c = 40 a, v ge = 15 v q g ? 313 ? nc gate to emitter charge q ge ? 61 ? gate to collector charge q gc ? 151 ? switching characteristic, inductive load turn?on delay time t j = 25 c v cc = 600 v, i c = 40 a r g = 10 v ge = 0 v/ 15v t d(on) ? 116 ? ns rise time t r ? 42 ? turn?off delay time t d(off) ? 286 ? fall time t f ? 121 ? turn?on switching loss e on ? 3.4 ? mj turn?off switching loss e off ? 1.1 ? total switching loss e ts ? 4.5 ? turn?on delay time t j = 175 c v cc = 600 v, i c = 40 a r g = 10 v ge = 0 v/ 15 v t d(on) ? 111 ? ns rise time t r ? 43 ? turn?off delay time t d(off) ? 304 ? fall time t f ? 260 ? turn?on switching loss e on ? 4.4 ? mj turn?off switching loss e off ? 2.5 ? total switching loss e ts ? 6.9 ? diode characteristic forward voltage v ge = 0 v, i f = 40 a v ge = 0 v, i f = 50 a, t j = 175 c v f ? ? 2.00 2.30 2.60 ? v reverse recovery time t j = 25 c i f = 40 a, v r = 400 v di f /dt = 200 a/ s t rr ? 240 ? ns reverse recovery charge q rr ? 2.5 ? c reverse recovery current i rrm ? 18 ? a reverse recovery time t j = 175 c i f = 40 a, v r = 400 v di f /dt = 200 a/ s t rr ? 392 ? ns reverse recovery charge q rr ? 5.36 ? c reverse recovery current i rrm ? 25.80 ? a product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions.
NGTB40N120FL2WG www. onsemi.com 3 typical characteristics figure 1. output characteristics figure 2. output characteristics v ce , collector?emitter voltage (v) v ce , collector?emitter voltage (v) 8 6 5 4 3 2 1 0 160 figure 3. output characteristics figure 4. typical transfer characteristics v ce , collector?emitter voltage (v) v ge , gate?emitter voltage (v) 10 5 0 figure 5. v ce(sat) vs t j t j , junction temperature ( c) 175 150 125 100 75 50 25 0 3.00 i c , collector current (a) i c , collector current (a) v ce , collector?emitter voltage (v) 7 v ge = 20 v to 13 v t j = 25 c 9 v 8 v 7 v 8 6 5 4 3 2 1 160 i c , collector current (a) 7 t j = 150 c 9 v 8 v 7 v 8 6 5 4 3 2 1 0 160 i c , collector current (a) 7 t j = ?55 c 9 v 8 v t j = 25 c t j = 150 c 200 v ge = 20 v to 13 v v ge = 20 v to 13 v 12 34 67 89 ?75 ?50 ?25 2.50 2.00 1.50 1.00 0.50 0.00 i c = 75 a i c = 40 a i c = 20 a figure 6. v f vs. t j 10 v 11 v 140 120 100 80 60 40 20 0 10 v 11 v 7 v 10 v 11 v 140 120 100 80 60 40 20 0 140 120 100 80 60 40 20 0 11 12 1 3 160 140 120 100 80 60 40 20 0 3.50 t j , junction temperature ( c) 175 125 100 50 0 ?25 ?50 ?75 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v f , forward voltage (v) 25 75 150 20 0 i f = 40 a i f = 20 a i f = 80 a
NGTB40N120FL2WG www. onsemi.com 4 typical characteristics figure 7. typical capacitance v ce , collector?emitter voltage (v) 90 80 50 40 30 20 10 0 100000 c, capacitance (pf) 100 c ies c oes c res 70 60 t j = 25 c 10000 1000 100 10 1 figure 8. diode forward characteristics v f , forward voltage (v) 3.0 2.5 2.0 1.5 1.0 0.5 0 70 i f , forward current (a) t j = 25 c t j = 150 c 60 50 40 30 20 10 0 3.5 4.0 figure 9. typical gate charge q g , gate charge (nc) 150 100 50 0 0 2 4 6 8 12 14 16 v ge , gate?emitter voltage (v) 200 10 v ce = 600 v v ce = 600 v v ge = 15 v i c = 40 a 250 300 350 figure 10. switching loss vs. temperature t j , junction temperature ( c) 140 120 100 80 60 40 20 0 5 switching loss (mj) 160 v ce = 600 v v ge = 15 v i c = 40 a rg = 10 e off e on 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 figure 11. switching time vs. temperature t j , junction temperature ( c) 140 120 100 80 60 40 20 0 100 1000 switching time (ns) 160 v ce = 600 v v ge = 15 v i c = 40 a rg = 10 t r t d(on) t f t d(off) 10 figure 12. switching loss vs. i c i c , collector current (a) 45 35 25 15 5 12 switching loss (mj) v ce = 600 v v ge = 15 v t j = 150 c rg = 10 e off e on 10 8 6 4 2 0 55 65 75 85
NGTB40N120FL2WG www. onsemi.com 5 typical characteristics figure 13. switching time vs. i c i c , collector current (a) 100 1000 switching time (ns) v ce = 600 v v ge = 15 v t j = 150 c rg = 10 t r t d(on) t f t d(off) 45 35 25 15 555657585 10 figure 14. switching loss vs. rg rg, gate resistor ( ) 45 35 25 15 5 switching loss (mj) 14 v ce = 600 v v ge = 15 v t j = 150 c i c = 40 a e off 55 65 75 85 e on 12 10 8 6 4 2 0 figure 15. switching time vs. rg rg, gate resistor ( ) 45 35 25 15 5 switching time (ns) 10000 55 65 75 85 1000 t r t d(on) t f t d(off) v ce = 600 v v ge = 15 v t j = 150 c i c = 40 a 100 10 figure 16. switching loss vs. v ce v ce , collector?emitter voltage (v) 550 500 450 400 350 switching loss (mj) 7 650 700 750 800 600 e off v ge = 15 v t j = 150 c i c = 40 a rg = 10 6 5 4 3 2 1 0 e on figure 17. switching time vs. v ce v ce , collector?emitter voltage (v) 550 500 450 400 350 650 700 750 800 600 switching time (ns) 1000 100 v ge = 15 v t j = 150 c i c = 40 a rg = 10 t r t d(on) t f t d(off) 10 figure 18. safe operating area v ce , collector?emitter voltage (v) i c , collector current (a) 1000 100 10 1 0.01 0.1 1 10 100 1000 50 s 100 s 1 ms dc operation single nonrepetitive pulse t c = 25 c curves must be derated linearly with increase in temperature 10000
NGTB40N120FL2WG www. onsemi.com 6 typical characteristics figure 19. reverse bias safe operating area v ce , collector?emitter voltage (v) i c , collector current (a) 1 10 100 1000 v ge = 15 v, t c = 125 c 1000 100 10 1 10000 figure 20. t rr vs. di f /dt (v r = 400 v) di f /dt, diode current slope (a/ ) 1300 1100 900 700 500 300 100 50 150 250 350 450 550 650 t rr , reverse recovery time (ns) t j = 25 c, i f = 40 a t j = 175 c, i f = 40 a figure 21. q rr vs. di f /dt (v r = 400 v) di f /dt, diode current slope (a/ ) 1300 1100 900 700 500 300 100 0 1 2 3 4 5 6 q rr , reverse recovery charge ( c) t j = 25 c, i f = 40 a t j = 175 c, i f = 40 a figure 22. i rm vs. di f /dt (v r = 400 v) di f /dt, diode current slope (a/ ) 1300 1100 900 700 500 300 100 0 10 20 30 40 50 60 70 i rm , reverse recovery current (a) t j = 25 c, i f = 40 a t j = 175 c, i f = 40 a 250 0.01 frequency (khz) ipk (a) 0.1 1 10 100 1000 figure 23. collector current vs. switching frequency t c = 110 c t c = 80 c v ce = 600 v, r g = 10 , v ge = 0/15 v t c = 80 c 200 150 100 50 0
NGTB40N120FL2WG www. onsemi.com 7 typical characteristics figure 24. igbt transient thermal impedance on?pulse width (s) 1 0.1 0.01 0.0001 1e?06 1 square?wave peak r(t) ( c/w) 1e?05 50% duty cycle 20% 10% 5% 2% single pulse r jc = 0.28 junction c 1 c 2 r 1 r 2 duty factor = t 1 /t 2 peak t j = p dm x z jc + t c case c n r n 0.1 0.01 0.001 0.0001 0.001 r i ( c/w) c i (j/ c) 0.048747 0.006487 0.043252 0.051703 0.107932 0.025253 0.023120 0.061163 0.092651 1.252250 figure 25. diode transient thermal impedance on?pulse width (s) square?wave peak r(t) ( c/w) 50% duty cycle 20% 10% 5% 2% single pulse 0.001 0.01 0.1 1 r jc = 0.50 junction case c 1 c 2 r 1 r 2 r n duty factor = t 1 /t 2 peak t j = p dm x z jc + t c c n 1 0.1 0.01 0.0001 1e?06 1e?05 0.001 r i ( c/w) c i (j/ c) 0.007703 0.000130 0.010613 0.010097 0.032329 0.046791 0.044179 0.083870 0.044938 0.217376 0.000942 0.003132 0.003093 0.006758 0.022635 0.119232 0.703706 0.460033
NGTB40N120FL2WG www. onsemi.com 8 figure 26. test circuit for switching characteristics figure 27. definition of turn on waveform
NGTB40N120FL2WG www. onsemi.com 9 figure 28. definition of turn off waveform
NGTB40N120FL2WG www. onsemi.com 10 package dimensions to?247 case 340al issue a e2 l1 d l b4 b2 b e 0.25 m ba m c a1 a 123 b e 2x 3x 0.635 m ba m a s p seating plane notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. slot required, notch may be rounded. 4. dimensions d and e do not include mold flash. mold flash shall not exceed 0.13 per side. these dimensions are measured at the outermost extreme of the plastic body. 5. lead finish is uncontrolled in the region defined by l1. 6. ? p shall have a maximum draft angle of 1.5 to the top of the part with a maximum diameter of 3.91. 7. dimension a1 to be measured in the region defined by l1. dim min max millimeters d 20.30 21.40 e 15.50 16.25 a 4.70 5.30 b 1.00 1.40 b2 1.65 2.35 e 5.45 bsc a1 2.20 2.60 c 0.40 0.80 l 19.80 20.80 q 5.40 6.20 e2 4.32 5.49 l1 3.50 4.50 p 3.55 3.65 s 6.15 bsc b4 2.60 3.40 note 6 4 note 7 q note 4 note 3 note 5 e2/2 note 4 on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of pa tents, trademarks, copyrights, trade secret s, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any product s herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any part icular purpose, nor does sci llc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typi cal? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating param eters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgic al implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer s hall indemnify and hold scillc and its officers , employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufac ture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 ngtb40n120fl2w/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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